STNM-DR-160B(U) SANYO

May 17–Qorvo®(NASDAQ:QRVO),a leading provider of RF solutions in mobile,infrastructure and aerospace and defense applications,today announced the availability of a new generation of 1200V silicon carbide(SiC)field effect transistors(FET)series,which have excellent on-resistance characteristics.The new UF4C/SC series 1200V Gen 4 SiC FETs are ideal for mainstream 800V bus architectures commonly found in EV onboard chargers,industrial battery chargers,industrial power supplies,DC/DC solar inverters,welding machines,Applications such as uninterruptible power supplies and induction heating.

5月17日–移动应用、基础设施与航空航天、国防应用中RF解决方案的领先供应商Qorvo®（纳斯达克代码：QRVO）今天宣布推出新一代1200V碳化硅(SiC)场效应晶体管(FET)系列，该系列具有出色的导通电阻特性。全新UF4C/SC系列1200V第四代SiC FET非常适用于主流的800V总线架构，这种架构常见于电动汽车车载充电器、工业电池充电器、工业电源、DC/DC太阳能逆变器、焊接机、不间断电源和感应加热等应用。