STNM-DR-250B(U) SANYO

Anup Bhalla,Chief Engineer,Power Devices,UnitedSiC/Qorvo,said:“We have expanded our 1200V product line with higher performance fourth-generation devices,enabling engineers to increase the bus design voltage to 800V.In electric vehicles,this voltage Rising is inevitable;these new devices support four different RDS(on)(drain-source on-resistance)levels,helping designers choose the right SiC device for each design.

UnitedSiC/Qorvo功率器件总工程师Anup Bhalla表示：“我们通过更高性能的第四代器件扩充了1200V产品系列，为工程师将总线设计电压提高到800V提供了有力支持。在电动汽车中，这种电压升高无法避免；这些新器件支持四种不同的RDS(on)（漏源导通电阻）等级，有助于设计师为每项设计选择合适的SiC器件。